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HMC965LP5E
GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER SMT WITH POWER DETECTOR, 12.5 - 15.5 GHz
Typical Applications
The HMC965LP5E is ideal for: * point-to-point radios
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Features
saturated output power: +34 dBm @ 20% pAe high output ip3: +40 dBm high Gain: 27 dB DC supply: +6V @ 1200 mA no external matching required
Amplifiers - lineAr & power - Chip Amplifiers - lineAr & power - smT
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* point-to-multi-point radios * VsAT & sATCom * military & space
Functional Diagram
General Description
The HMC965LP5E is a 4 stage GaAs phemT mmiC 2 watt power Amplifier with an integrated temperature compensated on-chip power detector which operates between 12.5 and 15.5 Ghz. The HMC965LP5E provides 27 dB of gain, +34 dBm of saturated output power, and 20% pAe from a +6V supply. The HMC965LP5E exhibits excellent linearity and is optimized for high capacity digital microwave radio. it is also ideal for 13.75 to 14.5 Ghz Ku Band VsAT transmitters as well as sATCom applications. The HMC965LP5E amplifier i/os are internally matched to 50 ohms and is packaged in a leadless Qfn 5x5 mm surface mount package and requires no external matching components.
Electrical Specifications
parameter frequency range Gain [3] Gain Variation over Temperature input return loss output return loss output power for 1 dB Compression (p1dB) saturated output power (psat) output Third order intercept (ip3)[2] Total supply Current (idd)
TA = +25 C, Vdd = Vdd1 = Vdd2 = Vdd3 = Vdd4 = Vdd5 = +6V, Idd = 1200mA [1]
min. Typ. 12.5 - 15.5 24 27 0.05 12 12 30 32 34 40 1200 max. Units Ghz dB dB/ C dB dB dBm dBm dBm mA
[1] Adjust Vgg between -2 to 0V to achieve idd = 1200mA typical. [2] measurement taken at +7V @ 1200mA, pout / Tone = +22 dBm [3] Board loss subtracted out
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For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC965LP5E
v00.1210
GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER SMT WITH POWER DETECTOR, 12.5 - 15.5 GHz
Broadband Gain & Return Loss vs. Frequency [1]
30 20 RESPONSE (dB) 10 0 -10 -20 -30 10 11 12 13 14 15 FREQUENCY (GHz) 16 17 18 22
Gain vs. Temperature [1]
38
+25C +85C -40C
34
S21 S11 S22
30
26
18 12 13 14 FREQUENCY (GHz) 15 16
Input Return Loss vs. Temperature
0
+25C +85C -40C
Output Return Loss vs. Temperature
0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30
+25C +85C -40C
-4 RETURN LOSS (dB)
-8
-12
-16
-20 12 13 14 FREQUENCY (GHz) 15 16
12
13
14 FREQUENCY (GHz)
15
16
P1dB vs. Temperature
38 36 34 32 30 28 26 12 13 14 FREQUENCY (GHz) 15 16
P1dB vs. Supply Voltage
38 36 34 32 30 28 26 12 13 14 FREQUENCY (GHz) 15 16
5V 6V
P1dB (dBm)
+25C +85C -40C
[1] Board loss subtracted out
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com
P1dB (dBm)
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Amplifiers - lineAr & power - Chip Amplifiers - lineAr & power - smT
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GAIN (dB)
HMC965LP5E
v00.1210
GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER SMT WITH POWER DETECTOR, 12.5 - 15.5 GHz
Psat vs. Temperature
38
Psat vs. Supply Voltage
38
Amplifiers - lineAr & power - Chip Amplifiers - lineAr & power - smT
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36 Psat (dBm) Psat (dBm)
+25C +85C -40C
36
34
34
32
32
30
30
5V 6V
28 12 13 14 FREQUENCY (GHz) 15 16
28 12 13 14 FREQUENCY (GHz) 15 16
P1dB vs. Supply Current (Idd)
38 36 34 32 30 28 26 12 13 14 FREQUENCY (GHz) 15 16
1100mA 1200mA 1300mA
Psat vs. Supply Current (Idd)
38 36 34 32 30 28 26 12 13 14 FREQUENCY (GHz) 15 16
1100mA 1200mA 1300mA
P1dB (dBm)
Output IP3 vs. Temperature, Pout/Tone = +22 dBm
48 46 44 42 IP3 (dBm) 40 38 36 34 32 30 12 13 14 FREQUENCY (GHz) 15 16
+25C +85C -40C
Output IP3 vs. Supply Current, Pout/Tone = +22 dBm
48 46 44 42 IP3 (dBm) 40 38 36 34 32 30 12 13 14 FREQUENCY (GHz) 15 16
1100mA 1200mA 1300mA
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For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com
P1dB (dBm)
HMC965LP5E
v00.1210
GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER SMT WITH POWER DETECTOR, 12.5 - 15.5 GHz
Output IP3 vs. Supply Voltage, Pout/Tone = +22 dBm
48 46 44 42 IP3 (dBm) 40 38 36 34 32 30 12 13 14 FREQUENCY (GHz) 15 16
5V 6V
Output IM3 @ Vdd = +5V
80 70 60 IM3 (dBc) 50 40 30 20 10 0 10 12 14 16 18 20 22 24 Pout/TONE (dBm)
13GHz 14GHz 15GHz
Output IM3 @ Vdd = +6V
80 70 60 IM3 (dBc) 50 40 30 20 10 0 10 12 14 16 18 20 22 24 Pout/TONE (dBm)
13GHz 14GHz 15GHz
Power Compression @ 14 GHz
40 Pout (dBm), GAIN (dB), PAE (%) 35 30 25 20 15 10 5 0 -10
Pout Gain PAE
-8
-6
-4
-2
0
2
4
6
8
10
INPUT POWER (dBm)
Detector Voltage Over Temperature
10
Reverse isolation vs. Temperature
0 -10
+25C +85C -40C
ISOLATION (dB)
Vref-Vdet (V)
1
12.5GHz +25C 12.5GHz +85C 12.5GHz -55C 15.5GHz +25C 15.5GHz +85C 15.5GHz -55C
-20 -30 -40 -50 -60 -70 -80
0.1
0.01
-5
3
11
19
27
35
-90 11 12 13 14 15 16 17 FREQUENCY (GHz)
OUTPUT POWER (dBm)
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com
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Amplifiers - lineAr & power - Chip Amplifiers - lineAr & power - smT
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HMC965LP5E
v00.1210
GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER SMT WITH POWER DETECTOR, 12.5 - 15.5 GHz
Gain & Power vs. Supply Current @ 14 GHz
40
Gain & Power vs. Supply Voltage @ 14 GHz
50 Gain (dB), P1dB (dBm), Psat (dBm) 45 40 35 30 25 20
Gain (dB), P1dB (dBm), Psat (dBm)
Amplifiers - lineAr & power - Chip Amplifiers - lineAr & power - smT
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35
Gain P1dB Psat
30
25 GAIN P1dB Psat
20
15 1100 1150 1200 1250 1300
Idd (mA)
5
5.5 Vdd (V)
6
Power Dissipation
10 9 POWER DISSIPATION (W) 8 7 6 5 4 3 2 1 0 -10 -8 -6 -4 -2 0 2 4 6 8
Max Pdis @ 85C 12 GHz 13 GHz 14 GHz 15 GHz 16 GHz
INPUT POWER (dBm)
Absolute Maximum Ratings
Drain Bias Voltage (Vdd) rf input power (rfin) Channel Temperature Continuous pdiss (T= 85 C) (derate 137 mw/C above 85 C) Thermal resistance (channel to die bottom) storage Temperature operating Temperature esD sensitivity (hBm) +8V +24 dBm 150 C 8.9 w 7.3 C/w -65 to +150 C -55 to +85 C Class 1A
Typical Supply Current vs. Vdd
Vdd (V) +5.0 +6.0 idd (mA) 1200 1200
Note: Amplifier will operate over full voltage ranges shown above Vgg adjusted to achieve Idd = 1200 mA
eleCTrosTATiC sensiTiVe DeViCe oBserVe hAnDlinG preCAUTions
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For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC965LP5E
v00.1210
GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER SMT WITH POWER DETECTOR, 12.5 - 15.5 GHz
Outline Drawing
noTes: 1. pACKAGe BoDY mATeriAl: AlUminA 2. leAD AnD GroUnD pADDle plATinG: 30-80 miCroinChes GolD oVer 50 miCroinChes minimUm niCKel. 3. Dimensions Are in inChes [millimeTers]. 4. leAD spACinG TolerAnCe is non-CUmUlATiVe 5. pACKAGe wArp shAll noT eXCeeD 0.05mm DATUm -C6. All GroUnD leADs AnD GroUnD pADDle mUsT Be solDereD To pCB rf GroUnD. 7. ClAssifieD As moisTUre sensiTiViTY leVel (msl) 1.
Package Information
part number HMC965LP5E package Body material rohs-compliant low stress injection molded plastic lead finish 100% matte sn msl rating msl1
[2]
package marking [1] h965 XXXX
[1] 4-Digit lot number XXXX [2] max peak reflow temperature of 260 C
Pin Descriptions
pin number 1 - 3, 6, 7, 10 - 12, 15, 16, 22 - 24, 27, 31 4 5, 8, 14, 17, 20, 25, 31 function n/C Description These pins are not connected internally, however all data shown herein was measured with these pins connected to rf/DC ground externally. This pad is DC coupled and matched to 50 ohms. These pins and package bottom must be connected to rf/DC ground. interface schematic
rfin
GnD
9
Vgg1
Gate control for amplifier. external bypass capacitors of 100pf, 10nf and 4.7uf are required.
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com
3 9-6
Amplifiers - lineAr & power - Chip Amplifiers - lineAr & power - smT
3 9
HMC965LP5E
v00.1210
GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER SMT WITH POWER DETECTOR, 12.5 - 15.5 GHz
Pin Descriptions (continued)
pin number function Description Drain bias voltage for the amplifier. external bypass capacitors of 100pf, 10nf and 4.7f capacitors are required. interface schematic
Amplifiers - lineAr & power - Chip Amplifiers - lineAr & power - smT
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13, 15, 26, 28 - 30
Vdd1, Vdd2, Vdd3, Vdd4, Vdd5
18
Vref
DC voltage of diode biased through external resistor, used for temperature compensation of Vdet. DC voltage representing rf output power rectified by diode which is biased through an external resistor.
19
Vdet
21
rfoUT
This pin is DC coupled and matched to 50 ohms.
Application Circuit
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For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC965LP5E
v00.1210
GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER SMT WITH POWER DETECTOR, 12.5 - 15.5 GHz
Evaluation PCB
List of Materials for Evaluation PCB EVAL01-HMC965LP5E
item J1, J2 J3, J4 C1, C5 - C11 C12, C16 - C27 C23, C27 - C33 U1 pCB [2] Description K Connector, sri DC pin 100 pf Capacitor, 0402 pkg. 10 nf Capacitor, 0402 pkg. 4.7 f Capacitor, Case A. HMC965LP5E power Amplifier 600-0048-00 evaluation pCB
[1]
[1] reference this number when ordering complete evaluation pCB [2] Circuit Board material: rogers 4350 or Arlon fr4
The circuit board used in the application should use rf circuit design techniques. signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from hittite upon request.
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com
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Amplifiers - lineAr & power - Chip Amplifiers - lineAr & power - smT
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